Researchers should show FET transfer characteristics on double-linear plots and include the gate-channel capacitance C i, the channel width, W, and length, L, V G sweep rate and all other. are equally responsible for. At the same time, it decreases. 1–4. Such a device is of interest as an alternate to G-MOSFETs, or as a back gate for G-MOSFETs with the feature that the device's Dirac. Pin Configuration. 5) Maintains all records of filter separator expiration dates and services for all tank and pump units (TPU’s), M978, and M969. 场效应管 （英語： field-effect transistor ，缩写： FET ）是一种通过电场效应控制电流的电子元件。. MNAME is the model name. (c) I D −V G characteristics of the WSe 2 Bio-FET exposed to different concentrations of glucose. Good for. grounded and there is a sil pad between the FET and tab. The transconductance, g m, as a function of V GS for various fixed V DS. Graphene, a single atom layer of carbon atoms, provides a two-dimensional platform with an extremely high sensitivity to charges due to its unique band structure and high surface-to-volume ratio. Yang, G. NASA Technical Reports Server (NTRS) Crandell, M. g. Cisco FET-40G QSFP Modules are fabric-extender transceiver modules used to connect to fabric links (links between the fabric extender switch and the parent switch). Contact Phone (304) 696-3116 Fax (304) 696-7136 Email fet@marshall. The diagnostic accuracy of 18 F-FET PET parameters was evaluated by receiver-operating-characteristic analysis and χ 2 testing. g. In Figure 2c the Q GS and Q GD quantity relative to the contribution of G GS and C GD are also indicated. and X. Two compounds contained PEG moieties ([ 18 F]FETE-PEG-TOCA, 8 and [ 18 F]FET-G-PEG-TOCA, 9 ), differing only by the terminal amino acid in the linker; this structural. A field-effect transistor (FET) based on ultrathin Ti3C2–MXene micropatterns is developed and utilized as a highly sensitive biosensor. Dong, Small,. 488788 USD with a 24-hour trading volume of $175,891,866 USD. 트랜지스터. M31 2 17 6 10 MODM L=5U W=2U M1 2 9 3 0 MOD1 L=10U W=5U AD=100P AS=100P PD=40U PS=40U ND, NG, NS, and NB are the drain, gate, source, and bulk (substrate) nodes, respectively. to what was measured in a planar FET with the same gate oxide physical thickness (Figure 17). 8. The device exhibits a high on/off ratio exceeding 1 × 10 9, and a carrier mobility of 118 cm 2 ·V −1 ·s −1. What is a NSFW subreddit. FET Transistor (Field Effect Transistor) A field-effect transistor (sometimes referred to as a unipolar transistor) is three-terminal active semiconductor equipment where an electric field generated by the input voltage controls the output current. . 2-GHz television receive-only (TVRO) band and for the 12-GHz direct. The aim of this study was to compare the diagnostic value of 18F–FET PET and PWI for tumor grading in a series of patients with newly diagnosed, untreated gliomas using an. Among them, field-effect mobility μ FET is usually derived from the equation as follows: (1) μ FET = L g m,max W C i V DS where g m,max and C i are the maximum transconductance and the gate capacitance per unit area, respectively [50]. It comes in two types: junction-gate FET (JFET) and metal-oxide-semiconductor FET (MOSFET). Overview. Still under development. The device exhibits a high on/off ratio exceeding 1 × 10 9, and a carrier mobility of 118 cm 2 ·V −1 ·s −1. These transistors are designed to overcome the drawbacks of the bipolar junction transistors. A decent ohmic contact resistivity of 9. V DS ) obtained for the devices operating in the. Max RDS(ON) R D S ( O N) = 36m Ω Ω at VGS V G S = 4. Good for traveling kinksters – Alt. We will use these devices to explain field effect switching. 2% increase from an hour ago and a 7. With the PowerGaN G-HEMT 650V, ST is expanding its STPOWER power transistor family with the addition of e-mode HEMTs (intrinsically normally-off devices) rated at 650V in top-, bottom-, and dual-side cooled SMD packages for high-power and high-frequency applications. Spare parts list UET-G . $1559. For a gate bias of V GS < ~6. 0 KP=2. Solution : Q3. FETs have been used as immunologically modified field effect transistors (ImmunoFETs) [19]. This set of Electronic Devices and Circuits Multiple Choice Questions & Answers (MCQs) focuses on “The FET Small-Signal Model”. The sensing mechanism is dominated by the gating effect instead of charge transfer. The schematic of the FET device is shown in Fig. 1. 280 0. a Transfer curves of a typical long-channel p-FET device fabricated on a 7. This product family outperforms silicon counterparts in terms of the R. Full size imageTable 1 The figures of merit of BGTC TSC-FET devices based on MAPbX 3 (X = Cl, Br, and I) Full size table The output characteristics ( I DS vs. Printed in Great Britain S0038-1101(97)00103-2 0038-1101/97 $17. 5 for driver NC-FET, is shown in the false-color SEM image of Fig. 1. FET-40G. 6 mA/mm and I O N / I O F F ratio of 10 6 was demonstrated on a p-GaN/AlN/AlGaN/GaN heterostructure on Si substrate. 8 GHz, GaN Power Amplifier X + HMC8500LP5DE The HMC8500LP5DE is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0. also write that weight in the box, and enter the date each vehicle will FIRST or WAS FIRST (e. If your manufacturer can't give you the information and you really need it, move on to another manufacturer. (5) FET ‘gain’ is specified as transconductance, g m, and denotes the magnitude of change of drain current with gate voltage, i. 23) 1. Full size image Biosensor’s transmission spectrumThe concept of GAA NS-FET is first introduced by IBM research group in 2015 [1]. 1 m is equivalent to 1. MOSFETs are widely used as power switching elements in regulators and motor controllers. Sensor configuration. ai traded was $186,774,730. Best overall BDSM dating site – Adult Friend Finder. Tellurium as a successor of silicon for extremely scaled. Q. For that reason, this device was named MOS transistor. Determine the minimum value of VDD required to put the device in the constant-current region of operation. Y and C. A monolayer graphene was obtained by CVD on a copper film and transferred onto the device substrate. PyGetWindow. The device performance is predicted using a 3D finite. J. In just the past hour, the price shrunk by 1. Every year, on November 1 and 2, Haiti becomes the stage for a unique celebration: Fèt Gede, the "Festival of the Dead". Conversations. 2% to all types of analyte at 5 × 10 −16 M in both buffer and full serum (Fig. , Huang, Z. , H. 052 0. In 2017, IBM research group experimentally demonstrated the first ever horizontally stacked GAA NS-FET which is considered as a serious contender to replace FinFET technology at the 5-nm node and beyond [2]. For this type of sensor, antibodies are immobilized on the gate insulator, as shown in Fig. The field-effect transistor ( FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. current is determined by a few variables: the drain voltage (V. a Phase-field simulations of domain wall evolution for S2 as V g varies from −8 V→ 0 V → −5 V in three steps with V g < V t1, V g > V t1, and V g < V t2, where V d = 8. 2%. G. The device design issues are described followed by a section on. F is the symbol for an insulated gate FET. ) This is ugly and I was thinking of adding a copper pour to the pcb, attach the FET to that, and then attach the pour to the case tab. X. 99 GBP for 1 month; 63. Using 2000MHz * km MMF (OM3), up to 300m link lengths are possible. A FET is an electronic switch in which the conductance of a semiconductor channel between the source and drain electrodes can be switched on and. FET stands for the Field-effect transistor. 025301-4 Chen et al. Gate Delay and CMOS Inverter Figure 18 shows the intrinsic gate delay (CV/I) of the fabricated CMOS FinFETs as compared with that of the published planar devices. We calculated direct source-to-drain tunneling currents (I SD-LEAK) in the Off state for different channel lengths and thicknesses using a dual-gate device structure (fig. 13. A black phosphorous (BP) nanosheet field-effect transistor biosensor is reported. G. Here we present a comprehensive assessment of the existing and future CMOS technologies, and discuss the challenges and opportunities for the design of. 장효과 트랜지스터 또는 전계효과 트랜지스터 ( field effect transistor, 약자 FET)는 게이트 전극에 전압 을 걸어 채널의 전기장 에 의하여 전자 또는 양공 이 흐르는 관문 (게이트)이 생기게 하는 원리로 소스, 드레인의 전류를 제어하는 트랜지스터 이다. FET-PET showed intense uptake in lesion on axial PET (f) and fused PET/CT (g) images with tumor-to-contralateral white mater (T/Wm) ratio of 2. (1), we get, W(x) = a b(x) = s 2 qND (V0 V(x)) (3) where a b(x) is the penetration of depletion region W(x) into the channel at a point x along the channel (Fig. , MoS 2) are of considerable interest for atomically thin transistors but generally limited by insufficient carrier mobility or driving current. W. Y. 43ps for p-FET, respectively, were achieved for theThe scaling characteristics of MoS 2 and Si transistors as a function of channel thickness and gate length are summarized in Fig. When V g = 0, the PFET is on and the NFET is off. The bias voltage in d – g is 0. a) Structure illustration of the flexible pressure sensor composed of PbTiO 3 nanowires and graphene; b) Linear current response of the PTNWs/G F-FET sensors during press and release process. Rev. V(x) is the applied potential across space-charge region at x and is negative number for an applied reverse bias. 4) Ensure FET are complete before the due date (every 30 days). So with a FET, we can take a low-level signal at the input and turn it into a high-level signal at the output. The device consists of a p-type graphene channel and an n-type semiconductor gate. gross/combined weight, place an (“X”) in the “VEHICLE OPERATED UNDER 10,001 LBS. 2 The I DS-V GS characteristics of a FET employing the buckyball. Some Ge atoms in the germanene sheet with N. FET is a vacuum. 12 fg/mL. 5 . Definition: FET is an acronym used for “ field effect transistor ”. The number of unit cells in the x-axis direction and atom sites (black and light gray spheres) in per unit cell are N x = 18 and N y = 24, respectively. are equally responsible for. D. Abstract. The region closer to the drain is found to be the most sensitive region, while. With a further increase in In composition (x > 0. When V g = 0, the PFET is on and the NFET is off. Two neuroradiologists (CeP with 20 years’ experience and AE with 5 years’ experience) reported all post. Long, G. Noise figure of narrowband W-J FET amplifiers. 03 cm 2 /V s. However, controlling the hierarchical microstructures and the structural evolution remains a significant challenge. 1c: the gate is extended through an external electrically connected platinum electrode, which. The first 2 symbol marking SMD. FET gain is less. 6 μA μm −1 and 123. C. Due to the ultrathin body of 2D materials, a 2D memory device can use a low working voltage and reduce the power consumption 32,33. Low-Noise Amplifier Design is a chapter from the book Microwave Electronics, which covers the fundamentals and applications of microwave circuits and devices. Definition. 1 2. R JA Thermal Resistance, Junction−to−Ambient (Note 1) 415 C/W 1. For example, if you have a measurement of 5 feet, you would multiply 5 by 30. , a g m of 5mA/V signifies that a V GS variation of one volt produces a 5mA change in I D. $899. G. 9 b), thus the specificity of the PNA probe-modified G-FET sensor is calculated about 14. Using 2000MHz * km MMF (OM3), up to 300m link lengths are possible. Biosensors based on field-effect transistors (FETs) have attracted much attention, as they offer rapid, inexpensive, and label-free detection. The development of power Field Effect Transistors (FET) operating in the 20 GHz frequency band is described. Max RDS(ON) R D S ( O N) = 36m Ω Ω at VGS V G S = 4. 5V, ID I D = 5. As the basic transistors have the junction of the emitter in the mode of forwarding bias this makes the device to operate at low impedance levels. 76. 3A. In this work, a FET biosensor based on graphene decorated with gold nanoparticles (Au NPs) was fabricated for lactose detection in a liquid-gate measurement configuration. 0 dB typical gain flatness. To quantify the operation mechanism of NC-FET, the slope or swing (S) of the entire I d –V g curve of a generic NC-FET is formulated in the form of decoupled contributions from electrostatics. Hepatic iron concentrations greater than the reference range are associated with hemosiderosis, thalassemia, and sideroblastic anemia. 3605 Weatherly Ln, Shelby, NC, 28150-9330. Doped p–n junctions are fundamental electrical components in modern electronics and optoelectronics. 89 l 0. 8 eV while maintaining the stability of β-(In x Ga 1-x) 2 O 3. 1549--1554, 1997 Elsevier Science Ltd. QSFP-40G-CSR-S. We demonstrate room-temperature ferroelectric field-effect transistors (Fe-FETs) with MoS 2 and CuInP 2 S 6 two-dimensional (2D) van der Waals heterostructure. GaN and LDMOS FETs The I. This work was supported by the National Key Research & Development Projects of China (Nos. W. A. 앞선 포스팅에서 알아본 BJT와 같이 FET 또한 크게 두 가지 종류가. The Ge atoms (represented by the black spheres) form a buckled germanene layer, and the unit cell of the germanene is marked by red spheres (A sites) and green spheres (B sites). It is represented with the symbol g m. J. Still under development. Definition. 9 b), thus the specificity of the PNA probe-modified G-FET sensor is calculated about 14. In this paper, we introduce. Si) and oxides (e. to what was measured in a planar FET with the same gate oxide physical thickness (Figure 17). BINARI, W. The kinetic profiles of the analogs in the kidney, which also expresses SSTR-2, were different from those in tumors, showing the highest uptake for. $899. g–l Simulations of rectifying characteristics of tunnel-contacted MoS 2 FET. Y. The E g of (In x Ga 1-x) 2 O 3 and In compositions were negatively correlated, and E g could be tuned within the range of 4. 它依靠 电场 去控制导电沟道形状，因此能控制 半导体材料 中某种类型 载流子 的沟道的 导电性 。. Significant research has been carried out in the field of nano Bio-FETs such as a SiNW-based FET sensor for sensitive (10 −15) dopamine (DA) detection, a PEDOT: PSS (polystyrene sulfonate) Bio-FET for DA detection in the range of 5 nM, 43 and a graphene-based FET (G-FET) with a detection limit in the range of 1 nM with high. Chemical sensor systems based on 2D and thin film materials. The strain dependent quantum confinement effect in terms of quantum capacitance is investigated and a drain current model is proposed under tight binding approximation. 99 ref m l f m l f m l f variable configuration zone r n p. A FET is a transistor which uses the field effect to control current flow. 9. g d s. 6V/12. et al. Background. This result indicates that PNA probe can significantly improved the specificity of the G-FET sensor. This review provides a detailed evaluation of reported Analyst Recent HOT articlesIn each ring oscillators, the component FET devices have a device scaling of W = 3 μm, L = 3 μm and a gate dielectric thickness of 35 nm. Phys. Canonical dynamics: equilibrium phase-space. A. Graphene-FET-based gas sensor properties depending on substrate surface conditions. (1), we get, W(x) = a b(x) = s 2 qND (V0 V(x)) (3) where a b(x) is the penetration of depletion region W(x) into the channel at a point x along the channel (Fig. Nanoscale field-effect transistors (FETs) represent a unique platform for real time, label-free transduction of biochemical signals with unprecedented sensitivity and spatiotemporal resolution, yet their translation toward practical biomedical applications remains challenging. Proprietor Paul was extremely helpful and accommodating, answering all my questions patiently and carefully. Moreover, the electromechanical detection. To evaluate the mobility of few-layer graphene sheets (FLGS), a graphene-based high-k ferroelectric field-effect transistor (GFE-FET) has been fabricated using a sol-gel spin coating method, where FLGS and high-k ferroelectric material like barium zirconium titanate/barium calcium titanate (BZT/BCT) act as a channel layer and gate insulating. This introduces considerable amounts of noise levels. S8, E and F). 5 x 18. Typical Application Circuit . (a, b) Dynamic characteristics of the 2D MOfeS-FET in response to V gs pulses of ±4 V at a V ds of 1 V. By optimizing the load resistance (RL), the response to methane of the commercial MP-4 sensor can be magnified ~15 times using this coupling circuit. To electrically passivate conducting graphene in graphene/MoS 2. 039 ref 0. To electrically passivate conducting graphene in graphene/MoS 2 heterostructure, we hydrogenated top graphene by low-energy indirect hydrogen plasma for 1000 s. 5 V, where the resistance of the sample started to drop. G. Electronics 2022, 11, 3589 3 of 11 Figure 2. J. 1 There is a wide variety of materials. Its output impedance is low due to low gain. But for ~6. 7–4. G. These were delivered with 2 by FET-40G and 8 by FET-10G GBIC's, each. A monolayer epitaxial graphene was synthesized by using a Cu-catalytic CVD method on an atomically flat sapphire substrate [25], which was transferred onto a SiO 2 /Si substrate. In this paper, a coupling p+n field effect transistor (FET) amplification circuit is designed to detect methane gas. Figure 1b. Si-NW Bio-FET design, fabrication, and characterization. 1d and. As far as I know, since BJTs are current controled devices, its transconductance (gm) differ from the FETs. PT =g m r op , β=R 2 /(R 1 +R 2 ), and (R 1 +R 2) >>R L Thus V o can be expressed as: (1 ) (1 PT EA) REF PT EA PT EA in PT o A A V A A A A V A V. Fet tl bom planned rile assassination of former Governor. Monolayer 2D semiconductors (e. Fig. How the list of NSFW subreddits was created. XDB30000000), Youth Innovation Promotion Association of CAS (No. In principle the G-FET output parameter is the conductance of the semiconductor inversion layer (transistor channel) in the linear operation region [18]: (29) g ch = μ ⋅ C I ⋅ w L ⋅ [V GS − V th] where μ is the mobility of the minority carriers in the semiconductor, C I is the insulator layer capacity, w and L are the channel width. Qg Total gate charge VCC = 520 V, IC = 60 A, VGE = 0 to 15 V (see Figure 28. • NMOS pass FET is easier to compensate at low loads and dropout, due to the higher output impedance of PMOS. But for ~6. Example) V S = 4 V, V G = 2 V, V D = 1 V V T = -0. Y. Hepatic iron concentrations above 3000 mcg/g are seen when there is iron overload without cellular injury and cirrhosis. It has an insulated gate, the voltage of which determines the conductivity of the device. Field-Effect Transistor: A transistor in which the voltage on one terminal (the gate) creates a field that allows or disallows conduction between the other two terminals (the source and drain). A prosperous future of intelligent and smart environments could be revolutionized by a system architecture with unrestricted shape and unlimited scalability (1–6). そのため. For the JFET in Fig. For p-channel HFETs, normally-off operation and low gate leakage were obtained by using a recessed-gate structure and a 20 nm Al 2 O 3 thin film grown by. , galactose and fructose) were minimal, as were responses when a scrambled glucose sequence was used (Fig. 5,6 No physical P-N junction is required in the JL FET, and the driving current of the JL FET is mainly conducting through its heavily doped silicon bulk. Tap for more steps. 99 USD / 69,99 EUR / 63. 2g), which is caused by the influence of graphene’s unique energy band structure (energy bandgap E g = 0 eV) (Current 2010). Fetch. Optoelectronic properties of graphene are exploited…Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Nowadays, the detection of low concentration combustible methane gas has attracted great concern. 00+0. Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm and below are benchmarked against equivalent FinFETs. 005 V (Fig. 5 mV. Graphene-FET (G-FET) realizes such high-sensitive elec. This article will cover three morphologies of graphene materials in biosensing applications: graphene nanosheet, graphene nanoribbon, and vertically-aligned graphene. G. This work reports on a molybdenum disulfide (MoS 2) based field-effect transistor (FET) biosensor for ultrasensitive label-free detection of DNA via phosphorodiamidate morpholino oligos (PMO)-DNA hybridization. Textile platform with functional fibrous devices could offer an opportunity to realize previously unidentified types of electronic systems with a freedom of form factor (1, 3, 15), unlimited scalability (2, 16, 17), and high upgradability (18, 19) after systemization. Maximum tumor-to-brain ratios (TBR max) of 18 F-FET uptake and the slope of the time-activity curves (20-50 min after injection) were determined. 08-05-2013 08:38 AM. 0 Plus Mouse Anti Slip Grip Tape Compatible With Logitech G Pro X Superlight Wireless Gaming Mouse Skins,Sweat Resistant,Cut to Fit,Easy to Apply,Pro Performance Upgrade. ENCLOSURE 8 PORT SCAPC W/1 1X8 SPLITTER. Micronized vaginal P, 200 mg three times daily was used for LPS. You will be given hormones to help your endometrium (lining of your uterus) accept the embryos. Full size image Table 1 The figures of merit of BGTC TSC-FET devices based on MAPbX 3 (X = Cl, Br, and I) Full size table The output characteristics ( I DS vs. A Field Effect Transistor (FET) is a three-terminal Active semiconductor device, where the output current is controlled by an electric field generated by the input voltage. For the differentiation between radiation injury and recurrence of brain metastasis, textural features extracted from CE-MRI had a diagnostic accuracy of 81% (sensitivity, 67%; specificity, 90%). 전계효과트랜지스터 (FET)는 게이트에 금속과 유전물질 (유전체)이 장착되는데 여러종류가 있습니다. 0936 yards, or 39. 2% to all types of analyte at 5 × 10 −16 M in both buffer and full serum (Fig. 1 V was used to ensure. DS. 08 pA/ μ m 2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS 2. P s is the spontaneous polarization. This product family outperforms silicon counterparts in terms of the R DS (on. This did not work as well as I hoped. [Grip Upgrade] Hotline Games 2. 2V< V GS < ~6. 1 fg/mL to 5. Cisco QSFP connector mod ule typically weigh 100 grams or less. W. FET uses embryos (fertilized eggs) that have been frozen. 4/4. E. The name Field Effect Transistor (FET) refers to the fact that the gate is turned on and off by the transistor with an electric field passing through the gate oxide. En los extremos del canal se hacen sendas conexiones óhmicas llamadas. acknowledges supports by the NSFC Grant 11574304, Chinese Academy of. S. The Cisco SFP-10G-SR-X is a multirate * 10GBASE-SR, 10GBASE-SW and OTU2/OTU2e module for extended operating temperature range. WlCKENDEN and J. The transfer curves of Fe-FinFETs having L G = 500 nm and W= 30 nm with Hf 0. The basic gain of vacuum tubes and FETs is expressed as transconductance. Tap for more steps. Nonspecific uptake in the liver was, in general, low (<7% ID/mL), with 18 F-FET-βAG-TOCA showing the lowest liver uptake and 18 F-FET-G-TOCA and 18 F-FETE-PEG-TOCA showing the highest liver uptake. For the PNA probe-modified G-FET sensor, Δ V cnp complementary is about 0. AD and AS are the areas of the drain and source diffusions, in m 2. Due to the development of device miniaturization, the emergence of two-dimensional (2D) materials may initiate the next technological leap toward the post-Moore era owing to their unique structures and physical properties. Therefore, the JL FET exhibits high immunity to SCE and surface scattering at the interface. 11 8. W. FETs have three terminals: source, gate, and drain. 3 A, the typical resistance of BP devices ranges from 10 3 to 10 4 Ω, which depends on the density and thickness of the BP nanosheets on the electrodes. 2 Complementary MOS (CMOS) Technology 199 NFET is turned on. G-FETs are particularly attractive as next generation bioelectronics due to their mass-scalability and low cost of the technology. AIP. This chapter describes the theory, fabrication, and performance of an n-channel Schottky-barrier-gate GaAs field-effect transistor (FET). In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. 197 ref 5. 1 Hz. 55% in the last 24 hours. The name itself gives a brief idea about its working principle, “field effect”, these two words clearly indicates it is a transistor controlled by electric. Van de Put, M. The as-produced BP biosensor showed both high sensitivity (lower limit of detection ~10 ng/ml) and selectivity towards human immunoglobulin G. Jenkins, W. B. Table II: Sum mariz ed results of the UEFT for the FET g roup (A-D) and co ntrols (E-H). Device mounted on FR−4 PCB, 1 inch x 0. The left (right) QPC, consisting of a pair of split gates L1 and L2. Molybdenum disulfide (MoS2) field-effect transistors (FETs) with four different source and drain metallic electrodes (Au, Ag, Al, Cu) were fabricated by mechanical exfoliation and vacuum. C. ADS VIEW EMAIL ADDRESSES . BINARI, W. Methods: Ninety-nine patients with previous cancellations of embryo transfer were included, 56 of whom were prospectively treated with intrauterine. Y201902), and CAS Project for Young Scientists in.